Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields

Kasapoglu E., Sakiroglu S., Sari H., Sokmen I., Duque C. A.

PHYSICA B-CONDENSED MATTER, cilt.554, ss.72-78, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 554
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.physb.2018.11.006
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.72-78
  • Anahtar Kelimeler: Double quantum well, Absorption coefficient, Donor impurity, Electric and magnetic field, HYDROSTATIC-PRESSURE, LASER FIELD, COEFFICIENTS, RECTIFICATION, TEMPERATURE, SINGLE, DOTS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" tuned GaAs/GaAlAs double quantum well as a function of the impurity position, size of the structure, and the electric and magnetic field intensities. The obtained results show that the electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields which will lead to new potential applications in optoelectronics.