Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field

Kasapoglu E. , Sari H. , Sokmen I.

PHYSICA B-CONDENSED MATTER, cilt.362, ss.56-61, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 362
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.physb.2005.01.475
  • Sayfa Sayıları: ss.56-61


The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells. (c) 2005 Elsevier B.V. All rights reserved.