Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field

Kasapoglu E., Sari H., Sokmen I.

PHYSICA B-CONDENSED MATTER, cilt.362, ss.56-61, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 362
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.physb.2005.01.475
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.56-61
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells. (c) 2005 Elsevier B.V. All rights reserved.