Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field


Creative Commons License

Sakiroglu S., Yesilgul U., Ungan F. , Duque C. A. , Kasapoglu E. , Sari H. , ...More

JOURNAL OF LUMINESCENCE, vol.132, no.6, pp.1584-1588, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 132 Issue: 6
  • Publication Date: 2012
  • Doi Number: 10.1016/j.jlumin.2012.01.060
  • Title of Journal : JOURNAL OF LUMINESCENCE
  • Page Numbers: pp.1584-1588
  • Keywords: Superlattices, Intense laser fields, Laser-dressed potential, OPTICAL-ABSORPTION SPECTRA, QUANTUM-WELLS, SEMICONDUCTOR SUPERLATTICES, BINDING-ENERGY, IMPURITIES, TRANSITIONS, SINGLE, SUPPRESSION, RADIATION, EXCITONS

Abstract

We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. (C) 2012 Elsevier B.V. All rights reserved.