Nonlinear optical properties of a single donor dopant in multilayered quantum dots under an electric field

Jaouane M., Arraoui R., Fakkahi A., Ed-Dahmouny A., Azmi H., El-Bakkari K., ...Daha Fazla

Physica B: Condensed Matter, cilt.716, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 716
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.physb.2025.417701
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Electric field, FEM, Pressure, Quantum confinement, Quantum dot, Second harmonic generation
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We investigate second harmonic generation (SHG) in a nanosystem of three wurtzite InxGa1−xN quantum dots embedded in InyGa1−yN and GaN matrices, under external electric fields along the growth axis and hydrostatic pressure. The influence of a single donor impurity positioned variably along the z-axis is also studied. Using fixed geometry (Rd=5nm, Lb=2nm, Ld=3nm) and experimentally validated parameters, the analysis is carried out within the framework of the effective mass approximation, combined with the finite element method. We analyze the impact of dot size, barrier width, field strength, and pressure on SHG. Results show that optimizing barrier width enhances SHG by maximizing electron-hole wavefunction overlap. The donor impurity alters the effective potential, shifting resonance energies and SHG efficiency. Electric fields and pressure provide effective tuning of the nonlinear optical response. This work demonstrates the potential of such nanostructures for tunable frequency doubling, optical switching, and sensitive photonic devices in integrated optoelectronic and sensing applications.