PHYSICA B-CONDENSED MATTER, cilt.406, sa.8, ss.1441-1444, 2011 (SCI-Expanded)
The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant. (C) 2011 Elsevier B.V. All rights reserved.