Hydrogenic impurities in quantum dots under intense high-frequency laser field

Yesilgul, U.; Sakiroglu, S.; Kasapoglu, ESİN; Sari, HÜSEYİN; Soekmen, I.

doi:10.1016/j.physb.2011.01.045

Hydrogenic impurities in quantum dots under intense high-frequency laser field

Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Soekmen I.

PHYSICA B-CONDENSED MATTER, cilt.406, sa.8, ss.1441-1444, 2011 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 406 Sayı: 8
Basım Tarihi: 2011
Doi Numarası: 10.1016/j.physb.2011.01.045
Dergi Adı: PHYSICA B-CONDENSED MATTER
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.1441-1444
Anahtar Kelimeler: Photoionizaton, Quantum dot, Impurity, Intense laser field, CARRIER MAGNETIC SEMICONDUCTORS, SHALLOW DONOR IMPURITIES, LO-PHONON INSTABILITY, WELL WIRES, RADIATION-FIELDS, PHOTOIONIZATION, ABSORPTION, ENERGY, ATOM
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant. (C) 2011 Elsevier B.V. All rights reserved.