Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field

Ungan F., Sakiroglu S., Yesilgul U., Erol A., Kasapoglu E., Sari H., ...Daha Fazla

JOURNAL OF LUMINESCENCE, cilt.134, ss.208-212, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 134
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.jlumin.2012.08.046
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.208-212
  • Anahtar Kelimeler: Quantum well, Intense laser field, Nonlinear optical property, Dilute-nitride, HYDROGENIC IMPURITY, MU-M, SEMICONDUCTOR, ABSORPTION, RECTIFICATION, THRESHOLD, DONORS, ENERGY, STATES, GAAS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effect of indium and nitrogen mole concentrations on the nonlinear optical properties in a Ga1-xInxNyAs1-y/GaAs single quantum well under the intense laser field is theoretically studied within the effective mass approximation and the envelope function approach. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results show that the linear, third-order nonlinear and total absorption and refractive index changes depend both on the intense laser field and on the indium and nitrogen concentrations. From the findings of this study, it has been concluded that the linear and nonlinear optical properties in a Ga1-xInxNyAs1-y/GaAs single quantum well under the intense laser field can be tuned by changing the indium and nitrogen mole fraction. (c) 2012 Elsevier B.V. All rights reserved.