Electric field-driven modulation of optical properties of a shallow donor in a GaAs/Ga1−xAlxAs pillbox surrounded by Ga1−yAlyAs
Physica B: Condensed Matter, cilt.742, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 742
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.physb.2026.419350
- Dergi Adı: Physica B: Condensed Matter
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
- Anahtar Kelimeler: Absorption coefficient, Donor impurity, Electric field, Pillbox, Refractive index
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
This research explores how an electric field (F) influences the optical absorption coefficients (OACs) and the relative refractive index (RI) of a donor impurity confined in a GaAs/Ga1−xAlxAs pillbox immersed in a Ga1−yAlyAs matrix (PQD). In these calculations, we use a variational approach within the effective mass approximation (EMA) framework. Our findings show that a growth-axis electric field distorts the electronic wave function, thereby tuning the energy spectrum and optical transition probabilities. This leads to peak shifts and notable amplitude variations in both the relative refractive index changes and the linear and nonlinear optical absorption coefficients. Furthermore, reducing the barrier thickness enhances quantum confinement and alters the resonance positions, while an increase in incident intensity amplifies third-order nonlinear contributions, reshaping the overall optical response. These outcomes confirm the precise optical tunability achievable through electric field, barrier design, and incident intensity, opening new avenues for tunable optoelectronic nanodevices.