Doping effects of the p-semiconductors on the electromechanical coupling coefficient of Rayleigh waves propagation in a PSC layered structure


Salah I. B., Othmani C., Njeh A., Takali F., DEMİR İ., Zhang B.

Thin-Walled Structures, cilt.215, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 215
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.tws.2025.113578
  • Dergi Adı: Thin-Walled Structures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Electromechanical coupling coefficient, p0-doping, Piezoelectric semiconductor thin film, Rayleigh waves
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

This is the first existing work in the literature where we study the electromechanical coupling coefficient (K2) of Rayleigh wave propagation in piezoelectric semiconductor (PSC) thin film over an elastic half-space. The present work contributes to filling the gap in the literature on calculating K2 for the PSC structures, which is never discussed in literature. The higher K2, the stronger the dependence of the behaviors of wave propagation on the electric-system properties. This topic is of interest for scenarios in which the mechanics of surface waves including phase velocity, attenuation and K2 have to be investigated as well as for the non-destructive and semiconductor chips communities. The short-circuit (SC) and open-circuit (OC) cases are considered and applied to calculate K2, while the 1st, 2st and 3st Rayleigh modes are chosen because they have a higher K2 in comparison with other higher Rayleigh modes. The results show that for the 1st, 2st and 3st modes, with p0 mapped to 1022m−3, K2 can reach approximately 0.264 %, 0.23 % and 0.0254 %, respectively. As the 1st mode has the higher K2 than the 2st and 3st modes, we were motivated to calculate K2 of this 1st mode vs several values of p0 after realizing that the relationship between K2 and p0-doping is not yet adequately addressed in the semiconductor community. Here, K2 shows a max value 3.1 % (at Re(kh) = 1.255) at p0=1021m−3. Moreover, we study the effect of the PSC thin film thickness on the K2, where results show that as the PSC thin film thickness decreases, the K2 increases significantly. The present work can be used as a basic parametric study for improving the semiconductor chips production. Additionally, it enables the development of high-performance acoustic sensors and microelectronics by optimizing energy conversion and surface wave control in PSC devices.