Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

Al E. B., Ungan F., Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.30, sa.22, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 30 Sayı: 22
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1142/s0217979216501393
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
  • Anahtar Kelimeler: Quantum well, impurity binding energy, dilute III-N-V semiconductors, transition energy, INTENSE LASER FIELD, HIGH-TEMPERATURE PERFORMANCE, GAS-SOURCE MBE, ELECTRIC-FIELD, DIODES, PHOTOLUMINESCENCE, OPERATION, NITROGEN, GROWTH, BAND
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of nitrogen and indium concentrations on the 1s, 2s, 2p(0) and 2p +/--like donor impurity energy states in a single Ga1-xInxNyAs1-y/GaAs quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.