Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells


Al E. B. , Ungan F. , Yesilgul U., Kasapoglu E. , Sari H. , Sokmen I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.30, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 30 Konu: 22
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1142/s0217979216501393
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B

Özet

The effects of nitrogen and indium concentrations on the 1s, 2s, 2p(0) and 2p +/--like donor impurity energy states in a single Ga1-xInxNyAs1-y/GaAs quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.