Effect of Sintering Temperature on Dielectric Properties of SiO2 Doped BaTiO3 Ceramics

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Öksüz K. E. , Torman M., Şen Ş., Şen U.

18th International Conference Materials, Methods Technologies, Burgas, Bulgaristan, 26 - 30 Haziran 2016, cilt.10, ss.361-366

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 10
  • Basıldığı Şehir: Burgas
  • Basıldığı Ülke: Bulgaristan
  • Sayfa Sayıları: ss.361-366


SiO2-doped BaTiO3 ceramics were prepared by solid state mixed oxide technique. The effect of small amounts (0.3 mol %) of SiO2 additive on the microstructure, sintering behavior and dielectric properties of BaTiO3-based ceramics have been investigated. SiO2-doped BaTiO3 ceramics sintered at 1175°C, 1200°C and 1225°C for 4h in air atmosphere have been found to exhibit high density and a uniform grain size. A scanning electron microscopy, X-ray diffraction analysis and LCR meters have been used to determine the microstructure, phase analysis and dielectric properties of the SiO2 doped BaTiO3 ceramics. The SiO2 can form a liquid phase belonging to the ternary system BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at the lower sintering temperature, and improves the sintering and dielectric properties of BaTiO3-based ceramics.

Key words: Barium titanate, Dielectric properties, Microstructure, Sintering, SiO2