Effects of Al concentration on photovoltaic property of ZnO:Al/p-type Si by pulsed filtered cathodic vacuum arc depositio ri system

Takci D. K., Tuzemen E., Yilmaz S., Esen R.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.9, ss.1549-1556, 2015 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9
  • Basım Tarihi: 2015
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1549-1556
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of Al concentration on XPS, Raman, Hall and photovoltaic properties of Al-doped ZnO films were investigated onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system, at room temperature. The Al doping effects in ZnO was performed by Raman measurements. The chemical state of ZnO:Al (AZO) films on Si substrate was investigated by using X-ray photoelectron spectroscopy (XPS). Hall Effect measurements were applied to characterize the electrical properties. Effect of doping concentration on photovoltaic property was also studied.