Akademik Veri Yönetim Sistemi
Journal of Ovonic Research, cilt.21, sa.5, ss.579-590, 2025 (SCI-Expanded, Scopus)
This work presents the development of PN, PIN, and P+PIN solar cells using GaAs and BGaAs in AM1.5G conditions. The structural modeling and simulation of the device were carried out using Silvaco applications. The efficiency of BGaAs and GaAs materials was examined by varying doping concentration and thickness. The study was designed to optimize the physical properties of PN, PIN, and P+PIN junction cell structures for high efficiency. First, the doping dosage and layer thickness were optimized to create the best possible design for the cells. Then, the conversion capacity, short-circuit current density, fill factor, and open-circuit voltage of the photovoltaic cells were evaluated. Finally, the optimized devices were compared against existing devices in the literature. While the simulated P+PIN structure efficiency reached 28.2%, compared to 25.2% for the PIN structure, homojunction GaAs attained an efficiency of around 22.4%, compared to the BGaAs/GaAs heterojunction, which only represents 19.6% efficiency. Each solar cell simulation was run at 300 K with 1 sun of normal solar spectrum AM1.5G light intensity.