XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates


Altuntaş İ.

Cumhuriyet Science Journal, vol.42, no.1, pp.184-190, 2021 (Other Refereed National Journals)

  • Publication Type: Article / Article
  • Volume: 42 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.17776/csj.858546
  • Title of Journal : Cumhuriyet Science Journal
  • Page Numbers: pp.184-190

Abstract

The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical Vapor Deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements were performed to characterization the growing GaN epilayer. It is observed that the using of different NH3 flow rate in the initial part of HT-GaN growth has an effect on both full-width at half-maximum (FWHM) values obtained from HRXRD results and intensities of yellow luminescence peaks. It is seen that the FWHM values obtained from the symmetric (00.2) omega scan increased as the NH3 flow rates in the initial part of HT-GaN growth increased. It is demonstrated that the intensities of yellow luminescence peaks are very sensitive to NH3 flow rates in the initial part of HT-GaN growth.