In this study, the equilibration and in the case of a particle flux to the surface, the growth of a one dimensional semiconductor surface of "V" initial shape is investigated by kinetic Monte Carlo method. The initial surface is assumed to consist of atomic height steps separated by terraces. In Monte Carlo simulations, the following processes are considered: the diffusion of free particles on the surface, the attachment/detachment of particles to/from step edges from/to a terrace in front of a step or to a terrace above the step, In the simulations the Ehrlich-Schwoebel barrier is also taken into account. The equilibration of "V" initial shape at various temperatures is investigated, Moreover, the effect of particle bonding energy on the surface profile and on the evolution of the surface is also investigated. In the case of a particle flux to the surface, the surface profile and its growth kinetics are investigated at various temperatures and flux values.