Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk

Fakkahi A., BAŞER P., Jaouane M., Sali A., Ed-Dahmouny A., El-Bakkari K., ...Daha Fazla

Physica B: Condensed Matter, cilt.681, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 681
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.physb.2024.415841
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Central cell correction, Finite element method, Linear and third order nonlinear optical absorption coefficients, Multi-layer quantum disk, Pressure, Temperature
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

GaAs/GaAlAs quantum dots can be doped with various impurities to modify their optoelectronic properties. Common impurities used for doping include: Hydrogenic impurity (HI), Silicon (Si), Selenium (Se), Germanium (Ge), and Sulfur (S) are common n-type dopant in GaAs-based materials. This work has investigated the effects of temperature and pressure on the refractive index changes (RICs) and optical absorption coefficients (OACs) in the multi-layer quantum disk, accounting for central cell correction. We have used the finite element method to calculate the eigenvalues and their corresponding wave-functions. These values are utilized in the computation of the OACs and RICs. Our outcomes can be summarized as follows: (i) The applied pressure induces a red-shift of the OACs peaks, and their magnitude is reduced. Similarly, temperature causes a blue-shift of the OACs peaks, and their magnitude is enhanced. (ii) The presence and type of impurity lead to significant changes in both OACs and RICs.