The effect of the intense laser field on the electronic states and optical properties of n-type double delta-doped GaAs quantum wells
OPTICAL MATERIALS, cilt.64, ss.82-87, 2017 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 64
- Basım Tarihi: 2017
- Doi Numarası: 10.1016/j.optmat.2016.11.041
- Dergi Adı: OPTICAL MATERIALS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.82-87
- Anahtar Kelimeler: Double delta-doped quantum well, Nonlinear optical properties, Intense laser field, HYDROGENIC IMPURITY, BINDING-ENERGY, ABSORPTION, RECTIFICATION, TRANSITIONS, SUBBANDS, LAYERS, MODEL, ATOMS
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
In this work, within the effective mass approximation we have performed a theoretical study of electronic states, the intersubband-related optical absorption coefficient and relative refractive index change properties in the GaAs-based double delta-doped quantum well under non-resonant intense laser field. By solving the Schrodinger equation in the laser-dressed confinement potential, We calculated eigenvalues and corresponding eigenfunctions as an intense laser parameter. We concluded that the separation between ground and first excited energy levels in the double delta-doped quantum well increases in energy by the increase of the laser field intensity and this effect leads to an optical blue-shift in intersubband transitions. Therefore a significant tunability of the optical transitions in double delta-doped quantum well can be achieved by modulating the intensity of the intense laser field. (C) 2016 Elsevier B.V. All rights reserved.