The effect of the intense laser field on the electronic states and optical properties of n-type double delta-doped GaAs quantum wells


Kasapoglu E. , Yesilgul U., Ungan F. , Sokmen I., Sari H.

OPTICAL MATERIALS, cilt.64, ss.82-87, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 64
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.optmat.2016.11.041
  • Dergi Adı: OPTICAL MATERIALS
  • Sayfa Sayıları: ss.82-87

Özet

In this work, within the effective mass approximation we have performed a theoretical study of electronic states, the intersubband-related optical absorption coefficient and relative refractive index change properties in the GaAs-based double delta-doped quantum well under non-resonant intense laser field. By solving the Schrodinger equation in the laser-dressed confinement potential, We calculated eigenvalues and corresponding eigenfunctions as an intense laser parameter. We concluded that the separation between ground and first excited energy levels in the double delta-doped quantum well increases in energy by the increase of the laser field intensity and this effect leads to an optical blue-shift in intersubband transitions. Therefore a significant tunability of the optical transitions in double delta-doped quantum well can be achieved by modulating the intensity of the intense laser field. (C) 2016 Elsevier B.V. All rights reserved.