The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer


Ozturk E. , Sokmen I.

SOLID STATE COMMUNICATIONS, vol.126, no.11, pp.605-609, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 11
  • Publication Date: 2003
  • Doi Number: 10.1016/s0038-1098(03)00301-6
  • Title of Journal : SOLID STATE COMMUNICATIONS
  • Page Numbers: pp.605-609

Abstract

The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schrodinger and Poisson equations self-consistently. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied electric field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons. (C) 2003 Elsevier Science Ltd. All rights reserved.