The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer

Ozturk E., Sokmen I.

SOLID STATE COMMUNICATIONS, cilt.126, sa.11, ss.605-609, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 126 Sayı: 11
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0038-1098(03)00301-6
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.605-609
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schrodinger and Poisson equations self-consistently. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied electric field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons. (C) 2003 Elsevier Science Ltd. All rights reserved.