The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
SOLID STATE COMMUNICATIONS, cilt.126, sa.11, ss.605-609, 2003 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 126 Sayı: 11
- Basım Tarihi: 2003
- Doi Numarası: 10.1016/s0038-1098(03)00301-6
- Dergi Adı: SOLID STATE COMMUNICATIONS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.605-609
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schrodinger and Poisson equations self-consistently. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied electric field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons. (C) 2003 Elsevier Science Ltd. All rights reserved.