Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field


Duque C. A. , Kasapoglu E. , Sakiroglu S., Sari H. , Sokmen I.

APPLIED SURFACE SCIENCE, vol.257, no.6, pp.2313-2319, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 257 Issue: 6
  • Publication Date: 2011
  • Doi Number: 10.1016/j.apsusc.2010.09.095
  • Title of Journal : APPLIED SURFACE SCIENCE
  • Page Numbers: pp.2313-2319

Abstract

In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga1-xAlxAs quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work. (C) 2010 Elsevier B.V. All rights reserved.