For asymmetric multiple step quantum wells (AMS QWs) and asymmetric inverse V-shaped multiple step quantum wells (AIVSMS QWs), the nonlinear optical features, such as the nonlinear optical rectification (NOR), the second harmonic generation (SHG) and the third harmonic generation (THG) coefficients are analyzed as according on the intense laser field (ILF). The found consequences indicate that the ILF parameter confirms a vital influence on the shape and height of the confined potential profile of both AMS QWs and AIVSMS QWs, and the alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the AIVSMS QWs compared to AMS QWs were affected differently from ILF intensity. These results indicate that NOR, SHG, and TRIG coefficient of AMS QWs and AIVSMS QWs may be regulated in a preferred energy range and the magnitude of the resonance peak (RP) by tuning the ILF parameter. By varying the ILF parameter, it is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients. Our results can be valuable in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.