Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure

ÖZTÜRK E., SÖKMEN İ.

SUPERLATTICES AND MICROSTRUCTURES, cilt.45, sa.1, ss.16-21, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.spmi.2008.11.009
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.16-21
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The energy levels of holes in symmetric single quantum well under the laser field are theoretically calculated within the framework of the effective mass approximation. Results obtained show that the potential profile and energy levels can significantly be modified and controlled by intense laser field and the well width. The effect of the laser field and the well width on the energy difference changes the degree of the confinement, and thus this behavior can be used to study these systems in regions of interest, without the need for the growth of many different samples. (C) 2008 Elsevier Ltd. All rights reserved.