The effect of an intense laser field on magneto donors in semiconductors


Sari H. , Kasapoglu E. , Sokmen I.

PHYSICS LETTERS A, cilt.311, ss.60-66, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 311 Konu: 1
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0375-9601(03)00456-0
  • Dergi Adı: PHYSICS LETTERS A
  • Sayfa Sayıları: ss.60-66

Özet

The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. We have shown that, not only the 'dressed' potential, but also the shape of the confinement potential, the strength of the external magnetic field parallel to the growth direction, and the impurity position play very important roles in the determining the binding energy of a hydrogenic impurity. (C) 2003 Elsevier Science B.V. All rights reserved.