The polarizability and the photoionization cross-section under the external fields for donor impurities in quantum well-wire

Koksal M., Kasapoglu E., Sari H., Sokmen I.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Türkiye, 30 Temmuz - 04 Ağustos 2006, cilt.4, ss.332-333 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 4
  • Doi Numarası: 10.1002/pssc.200673289
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.332-333
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this study, we have calculated the donor impurity binding energy, donor impurity related photoionization cross-section and polarizability in symmetric GaAs/Ga1-xAlxAs quantum well-wire as a function of the impurity positions, dimensions of the structures and external electric and magnetic field, the calculations were performed within the effective mass approximation, using a variational method.