The polarizability and the photoionization cross-section under the external fields for donor impurities in quantum well-wire


Koksal M. , Kasapoglu E. , Sari H. , Sokmen I.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Turkey, 30 July - 04 August 2006, vol.4, pp.332-333 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 4
  • Doi Number: 10.1002/pssc.200673289
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.332-333

Abstract

In this study, we have calculated the donor impurity binding energy, donor impurity related photoionization cross-section and polarizability in symmetric GaAs/Ga1-xAlxAs quantum well-wire as a function of the impurity positions, dimensions of the structures and external electric and magnetic field, the calculations were performed within the effective mass approximation, using a variational method.