Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers

Koksal M. , Kasapoglu E. , Sari H. , Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, cilt.46, sa.3, ss.507-512, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 46 Konu: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.spmi.2009.04.012
  • Sayfa Sayıları: ss.507-512


Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. (C) 2009 Elsevier Ltd. All rights reserved.