Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
SUPERLATTICES AND MICROSTRUCTURES, cilt.46, sa.3, ss.507-512, 2009 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 46 Sayı: 3
- Basım Tarihi: 2009
- Doi Numarası: 10.1016/j.spmi.2009.04.012
- Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.507-512
- Anahtar Kelimeler: Photoionization, Quantum-well wires, Donor impurity, HYDROGENIC IMPURITY, WELL, STATES, FIELD
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. (C) 2009 Elsevier Ltd. All rights reserved.