The effects of intense laser field on optical responses of n-type delta doped GaAs quantum well under applied electric and magnetic fields

Sari H., Ungan F., Sakiroglu S., Yesilgul U., Sokmen I.

OPTIK, cilt.162, ss.76-80, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 162
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.ijleo.2018.02.092
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.76-80
  • Anahtar Kelimeler: delta-Doped quantum well, Optical response, Intense laser field, Electromagnetic field, EFFECT TRANSISTOR, ABSORPTION COEFFICIENTS, ELECTROMAGNETIC-FIELDS, STATES
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

This work presents the results of the theoretical study of the effects of non-resonant intense laser field, electric and magnetic fields on optical responses of GaAs n-type delta-doped quantum well associated to the electron transitions. Optical properties are obtained by using the compact-density matrix method. The numerical results show that the applied external fields have a significant effect on the optical characteristics of these structures, such as the optical absorption coefficient and refractive index. Thus, such futures can be use to tune the optical properties of doped semiconductor heterostructures. (C) 2018 Elsevier GmbH. All rights reserved.