authoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.