The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well

Ungan F., Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, cilt.49, sa.6, ss.635-643, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 49 Sayı: 6
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.spmi.2011.04.001
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.635-643
  • Anahtar Kelimeler: Modulation-doped, Intersubband transitions, Hydrostatic pressure, APPLIED ELECTRIC-FIELD, INTERSUBBAND TRANSITIONS, CONDUCTION-BAND, BINDING-ENERGY, GAAS, IMPURITY, HETEROSTRUCTURES, SEMICONDUCTORS, TEMPERATURE, ABSORPTION
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Within the framework of effective-mass approximation, we have calculated theoretically the effects of hydrostatic pressure and doping concentration on subband structure and optical transitions in modulation-doped GaAs/Al(x)Ga(1-x)As quantum well for different well widths. The electronic structure of modulation-doped quantum well under the hydrostatic pressure is determined by solving the Schrodinger and Poisson equations self-consistently. The results obtained show that intersubband transitions and the subband energy levels in the modulation-doped quantum well can be significantly modified and controlled by the well width, donor concentration and hydrostatic pressure. (C) 2011 Elsevier Ltd. All rights reserved.