The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well


Ungan F. , Yesilgul U., Sakiroglu S., Kasapoglu E. , Sari H. , Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.49, no.6, pp.635-643, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 49 Issue: 6
  • Publication Date: 2011
  • Doi Number: 10.1016/j.spmi.2011.04.001
  • Title of Journal : SUPERLATTICES AND MICROSTRUCTURES
  • Page Numbers: pp.635-643
  • Keywords: Modulation-doped, Intersubband transitions, Hydrostatic pressure, APPLIED ELECTRIC-FIELD, INTERSUBBAND TRANSITIONS, CONDUCTION-BAND, BINDING-ENERGY, GAAS, IMPURITY, HETEROSTRUCTURES, SEMICONDUCTORS, TEMPERATURE, ABSORPTION

Abstract

Within the framework of effective-mass approximation, we have calculated theoretically the effects of hydrostatic pressure and doping concentration on subband structure and optical transitions in modulation-doped GaAs/Al(x)Ga(1-x)As quantum well for different well widths. The electronic structure of modulation-doped quantum well under the hydrostatic pressure is determined by solving the Schrodinger and Poisson equations self-consistently. The results obtained show that intersubband transitions and the subband energy levels in the modulation-doped quantum well can be significantly modified and controlled by the well width, donor concentration and hydrostatic pressure. (C) 2011 Elsevier Ltd. All rights reserved.