The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well


Kasapoglu E. , Sari H. , Sokmen I.

SURFACE REVIEW AND LETTERS, vol.12, no.2, pp.155-159, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 12 Issue: 2
  • Publication Date: 2005
  • Doi Number: 10.1142/s0218625x05006871
  • Title of Journal : SURFACE REVIEW AND LETTERS
  • Page Numbers: pp.155-159

Abstract

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.