The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well


Kasapoglu E. , Sari H. , Sokmen I.

SURFACE REVIEW AND LETTERS, cilt.12, ss.155-159, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 12 Konu: 2
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1142/s0218625x05006871
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Sayfa Sayıları: ss.155-159

Özet

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.