The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells

Ozturk O., Ozturk E., Elagoz S.

JOURNAL OF MOLECULAR STRUCTURE, cilt.1156, ss.726-732, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 1156
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.molstruc.2017.12.012
  • Dergi Adı: JOURNAL OF MOLECULAR STRUCTURE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.726-732
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this study, the electronic properties of symmetric and asymmetric double Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells have been investigated depending on the barrier width. Using the effective mass approach, the energy levels and wave functions of double quantum wells (DQW) have been calculated by solving the Schrodinger equation. Our results show that the potential height and the energy levels of Ga(1-x)ln(x)As/GaAs DQW are always higher than of Ga(1-x)ln(x)As/GaAs DQW structure. Also, for Ga(1-x)ln(x)As/GaAs DQW the variation of the energy difference between these levels as dependent on the barrier width is more than for Ga1-xAlxAs/GaAs DQW. We say that the barrier width have a great effect on the electronic characteristics of different symmetric and asymmetric DQW structures. (C) 2017 Elsevier B.V. All rights reserved.