The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well


Ungan F. , Kasapoglu E. , Duque C. A. , Yesilgul U., Sakiroglu S., Sokmen I.

EUROPEAN PHYSICAL JOURNAL B, vol.80, no.1, pp.89-93, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 80 Issue: 1
  • Publication Date: 2011
  • Doi Number: 10.1140/epjb/e2011-10902-y
  • Title of Journal : EUROPEAN PHYSICAL JOURNAL B
  • Page Numbers: pp.89-93

Abstract

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga (x) In1- (x) N (y) As1- (y) N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.