The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well

Ungan, FATİH; Kasapoglu, ESİN; Duque, C.; Yesilgul, U.; Sakiroglu, S.; Sokmen, I.

doi:10.1140/epjb/e2011-10902-y

The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well

Ungan F., Kasapoglu E., Duque C. A., Yesilgul U., Sakiroglu S., Sokmen I.

EUROPEAN PHYSICAL JOURNAL B, cilt.80, sa.1, ss.89-93, 2011 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 80 Sayı: 1
Basım Tarihi: 2011
Doi Numarası: 10.1140/epjb/e2011-10902-y
Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.89-93
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga (x) In1- (x) N (y) As1- (y) N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.