Akademik Veri Yönetim Sistemi
EUROPEAN PHYSICAL JOURNAL PLUS, cilt.140, ss.1-10, 2025 (SCI-Expanded)
This study investigates themultifaceted impact of position-dependent effectivemass, temperature, and hydrostatic pressure
on the electronic and optical properties of single-doped quantum wells, with a particular emphasis on varying doping levels. Utilizing
effective mass and parabolic band approximations, calculations were meticulously conducted via the diagonalization method,
employing a trigonometric orthonormal function basis to elucidate the eigenvalues and eigenfunctions of the confined electron
potential. The obtained results unveil substantial alterations in electron energies, state transitions, and absorption spectra consequent
to fluctuations in doping levels, temperature, and pressure. These findings provide profound insights into the intricate interplay
between semiconductor characteristics and external stimuli, laying a foundation for the optimization of laser and optoelectronic
devices through the tailored engineering of material properties. This comprehensive understanding not only advances fundamental
knowledge in semiconductor physics but also paves the way for the development of innovative materials with customized optical
functionalities, thus driving progress in a wide array of technological applications.