InGaAs-based Gunn light emitting diode

KALYON G., MUTLU S., KURUOĞLU F., Pertikel I., DEMİR İ., EROL A.

Materials Science in Semiconductor Processing, cilt.159, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 159
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.mssp.2023.107389
  • Dergi Adı: Materials Science in Semiconductor Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: Gunn diode, Light emitting diode, InGaAs, Gunn oscillations, Gunn domain
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

© 2023 Elsevier LtdWe report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour Phase Epitaxy (MOVPE) on a semi-insulating InP substrate and fabricated in a planar architecture with a stepped structure at anode side to suppress the destructive effect of high built-in electric field in propagating Gunn domain. Gunn diode is operated under pulsed voltage with a pulse width of 60 ns and pulse duration of 4.5 ns to keep the duty cycle as low as 0.0013%. The Gunn oscillations with an 1 ns period are observed at around 4.1 kV/cm, which corresponds to the electric field threshold of Negative Differential Resistance (NDR). The light emission at around 1.6 μm also starts at the threshold electric field of the NDR region (E = 4.2 kV/cm) of the current-voltage curve, and the emission intensity increases drastically with increasing applied electric field. The observed light emission at NDR threshold electric field where Gunn oscillations appear on the voltage pulse is attributed to the impact ionisation process occurring in the current domains along the sample, which generates excess carriers to initiate the band-to-band recombination in In0.53Ga0.47As.