The triple Si delta-doped GaAs structure

Ozturk E. , Sari H. , Ergun Y., Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.80, sa.1, ss.167-171, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 80 Konu: 1
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1007/s00339-003-2285-3
  • Sayfa Sayıları: ss.167-171


For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To find the subband structure of the triple delta-doped quantum well we have solved self-consistently both Schrodinger and Poisson equations. From our calculations, we have seen that the electronic properties of triple Si delta-doped GaAs structure depend strongly on the spacer thickness between the adjacent two doping layers. In this study, we can estimate that the mobility in closely spaced triple delta-doped GaAs structures is very high compared to single delta-doped structures because of the overlap between the electron wave function and the ionized scattering centres in single delta-doped structures.