In this study, the alteration of the potential profile, the energy levels, the dipole matrix element and the resonant peaks of the linear optical absorption (OA) and optical rectification (OR) coefficients in GaAs/GaAlAs triple quantum well (TQW) are calculated as dependent on the applied electric field and the magnetic field. The results show that the shape of confined potential profile, the energy levels and the dipole moment matrix elements are changed as dependent on the external fields. Also, the resonant peaks of the OA and OR coefficients depend on the applied external field effects. Therefore, I hope that these results will provide important improvement in semiconductor device applications, for suitable choice of electric and magnetic field values. It may particularly be useful in technological applications that the structure of TQW changes with the strength and direction of the external electric field.