Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

Tiutiunnyk A., Mora-Ramos M. E., Morales A. L., Duque C. M., Restrepo R. L., Ungan F., ...Daha Fazla

OPTICAL MATERIALS, cilt.64, ss.496-501, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 64
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.optmat.2017.01.001
  • Dergi Adı: OPTICAL MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.496-501
  • Anahtar Kelimeler: Intense laser field, Quantum well, Raman scattering, INPLANE MAGNETIC-FIELDS, HYDROSTATIC-PRESSURE, PHOTOLUMINESCENCE, SEMICONDUCTORS, GENERATION, IMPURITY, WIRES, DOT
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,AI)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm(-1). The system proposed here is an alternative choice for the development of Al chi Ga1-chi As semiconductor laser diodes that can be tuned via an external nonresonant intense laser field. (C) 2017 Elsevier B.V. All rights reserved.