THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD


Yesilgul U., Ungan F. , Kasapoglu E. , Sari H. , Sokmen I.

MODERN PHYSICS LETTERS B, vol.25, no.32, pp.2451-2459, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 32
  • Publication Date: 2011
  • Doi Number: 10.1142/s0217984911027467
  • Title of Journal : MODERN PHYSICS LETTERS B
  • Page Numbers: pp.2451-2459

Abstract

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.