MODERN PHYSICS LETTERS B, cilt.25, sa.32, ss.2451-2459, 2011 (SCI-Expanded)
The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.