V/III ratio effects on high quality InAlAs for quantum cascade laser structures


DEMİR İ. , ELAGÖZ S.

SUPERLATTICES AND MICROSTRUCTURES, vol.104, pp.140-148, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 104
  • Publication Date: 2017
  • Doi Number: 10.1016/j.spmi.2017.02.022
  • Title of Journal : SUPERLATTICES AND MICROSTRUCTURES
  • Page Numbers: pp.140-148

Abstract

In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x)A(1-x)As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the VIII ratio with fixed metalorganic precursor flow is a crucial parameter on In In(x)A(1-x)As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. (C) 2017 Elsevier Ltd. All rights reserved.