Subband structure and band bending in symmetric modulation-doped double quantum wells

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Ungan F. , Ozturk E. , Ergun Y., Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.29, sa.1, ss.27-31, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Konu: 1
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1051/epjap:2004209
  • Sayfa Sayıları: ss.27-31


We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrodinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.