Subband structure and band bending in symmetric modulation-doped double quantum wells
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.29, sa.1, ss.27-31, 2005 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 29 Sayı: 1
- Basım Tarihi: 2005
- Doi Numarası: 10.1051/epjap:2004209
- Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.27-31
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrodinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.