Subband structure and band bending in symmetric modulation-doped double quantum wells


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Ungan F. , Ozturk E. , Ergun Y., Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.29, no.1, pp.27-31, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 29 Issue: 1
  • Publication Date: 2005
  • Doi Number: 10.1051/epjap:2004209
  • Title of Journal : EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Page Numbers: pp.27-31

Abstract

We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrodinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.