The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN

Perkitel İ., Altuntaş İ., Demir İ.

GAZI UNIVERSITY JOURNAL OF SCIENCE, cilt.35, sa.1, ss.281-291, 2022 (ESCI) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35 Sayı: 1
  • Basım Tarihi: 2022
  • Doi Numarası: 10.35378/gujs.822954
  • Dergi Adı: GAZI UNIVERSITY JOURNAL OF SCIENCE
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Aerospace Database, Aquatic Science & Fisheries Abstracts (ASFA), Communication Abstracts, Compendex, Metadex, Civil Engineering Abstracts, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.281-291
  • Anahtar Kelimeler: RCA, Epitaxial AlN, MOVPE, X-ray diffraction, In situ reflectance, ATOMIC-LAYER EPITAXY, DIODES, GAN
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this work, the effect of Si (111) substrate surface cleaning by RCA (Radio Corporation of America) method on growth rate and crystalline quality of epitaxially grown AlN thin films by MOVPE (Metal Organic Vapor Phase Epitaxy) technique is investigated. In situ reflectance system and high resolution X-ray diffraction (HRXRD) technique are used for the analysis of growth rate and crystal quality of epitaxial AlN layers, respectively. Also, The Raman measurement is done to show the effect of the RCA cleaning procedure on the position of the peaks that occurred in the Raman spectra. The results have shown that the surface cleaning of Si (111) substrate by the RCA method removes the oxide layer formed on the surface, also helps to decrease the parasitic reactions and increases the adatom efficiency, results in an increased growth rate of the AlN layer. Besides, surface cleaning of Si (111) substrate by the RCA method has reduced the FWHM value similar to 5% for omega-2 theta scan and similar to 60% for omega scan of AlN epilayer, indicating an improvement in crystal quality.