Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0:70Ga0:03As/Al0:60In0:40 As superlattice under applied electric field for laser and detector applications

Alaydin B. Ö.

International Journal of Modern Physics B, cilt.35, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1142/s0217979221500272
  • Dergi Adı: International Journal of Modern Physics B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Anahtar Kelimeler: In0.70Ga0.30As and Al0.60In0.40As, AlAs quantum barrier, superlattice, electric field, electronic and optical properties, ABSORPTION, RECTIFICATION, WELLS, SYSTEMS, DOTS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

© 2021 World Scientific Publishing Company.Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.03As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as 403 and 023 eV for E32 and E21 in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5.