Optical and structural parameters of the ZnO thin film grown by pulsed filtered cathodic vacuum arc deposition

Senadim E. , Eker S., Kavak H., Esen R.

SOLID STATE COMMUNICATIONS, vol.139, no.9, pp.479-484, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 139 Issue: 9
  • Publication Date: 2006
  • Doi Number: 10.1016/j.ssc.2006.07.001
  • Page Numbers: pp.479-484


Transparent conductive ZnO film was deposited on glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD). Optical parameters such as absorption coefficient alpha, the refractive index n, energy band gap E-g and dielectric constants have been determined using different methods. Kramers-Kronig and dispersion relations were employed to determine the complex refractive index and dielectric constants using reflection data in the ultraviolet-visible-near infrared regions. The spectra of the dielectric coefficient were used to calculate the energy band gap and the value was 3.24 eV The experimental energy band gap was found to be 3.22 eV for 357 nm thick ZnO thin film. The envelope method was also used to calculate the refractive index and the data were consistent with K-K relation results. The structure of the film was analyzed with an x-ray diffractometer and the film was polycrystalline in nature with preferred (002) orientation. (c) 2006 Elsevier Ltd. All rights reserved.