Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well


Yesilgul U., Ungan F. , Kasapoglu E. , Sari H. , Sokmen I.

PHYSICA B-CONDENSED MATTER, vol.407, no.3, pp.528-532, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 407 Issue: 3
  • Publication Date: 2012
  • Doi Number: 10.1016/j.physb.2011.11.030
  • Title of Journal : PHYSICA B-CONDENSED MATTER
  • Page Numbers: pp.528-532
  • Keywords: Quantum wells, Semiconductors, Exciton binding energy, MOLECULAR-BEAM EPITAXY, HYDROGENIC DONOR STATES, ELECTRON EFFECTIVE-MASS, OPTICAL-PROPERTIES, BAND PARAMETERS, SEMICONDUCTORS, TEMPERATURE, IMPURITIES, ALLOYS, PHOTOLUMINESCENCE

Abstract

The effects of an intense, high-frequency laser field linearly polarized along the growth direction on the binding energy of excitons confined in a GaInNAs/GaAs quantum well is computed for different nitrogen and indium mole fractions by means of a variational technique within the effective-mass approximation. Our results show that such laser field creates an additional geometric confinement on the electronic and exciton states in the quantum well and the exciton binding energy depends on both the nitrogen and indium concentrations. (C) 2011 Elsevier B.V. All rights reserved.