Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field


SARİ H. , KASAPOĞLU E. , YEŞİLGÜL Ü. , ŞAKİROĞLU S., UNGAN F. , SÖKMEN İ.

EUROPEAN PHYSICAL JOURNAL B, cilt.90, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 90 Konu: 9
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/epjb/e2017-80210-9
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL B

Özet

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double delta-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrodinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the d-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.