Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field

SARİ H., KASAPOĞLU E., YEŞİLGÜL Ü., ŞAKİROĞLU S., UNGAN F., SÖKMEN İ.

EUROPEAN PHYSICAL JOURNAL B, cilt.90, sa.9, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 90 Sayı: 9
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/epjb/e2017-80210-9
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double delta-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrodinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the d-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.