Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field

SARİ H., KASAPOĞLU E., YEŞİLGÜL Ü., ŞAKİROĞLU S., UNGAN F., SÖKMEN İ.

EUROPEAN PHYSICAL JOURNAL B, vol.90, no.9, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 90 Issue: 9
  • Publication Date: 2017
  • Doi Number: 10.1016/epjb/e2017-80210-9
  • Journal Name: EUROPEAN PHYSICAL JOURNAL B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sivas Cumhuriyet University Affiliated: Yes

Abstract

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double delta-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrodinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the d-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.