Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field
EUROPEAN PHYSICAL JOURNAL B, cilt.90, sa.9, 2017 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 90 Sayı: 9
- Basım Tarihi: 2017
- Doi Numarası: 10.1016/epjb/e2017-80210-9
- Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double delta-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrodinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the d-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.