Optical Properties of GaAs/GaAlAs Multiple Quantum Wells under the External Fields

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Özbakır R., Aktaş V.

4.th International Conference on Engineering and Natural Science (ICENS-2018), Kiev, UKRAINE, Kyyiv, Ukrayna, 2 - 06 Mayıs 2018

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Kyyiv
  • Basıldığı Ülke: Ukrayna
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

OPTICAL PROPERTIES OF GAAS/GAALAS MULTIPLE QUANTUM WELLS

UNDER THE EXTERNAL FIELDS

Rana Ozbakir*, Veli Aktas

Cumhuriyet University, Science Enstitute

*ramca@cumhuriyet.edu.tr

Abstract:

In this study, we have investigated the effects of the well parameters (Lw well width, Lb barrier width),

applied the external electric and magnetic field strengths and direction of the magnetic field (tilt angle)

on the electronic and optical properties of the GaAs/GaAlAs multiple quantum wells are investigated.

The energy levels and wave functions of the system are calculated by using the transfer matrix method

within the effective mass approximation and the compact density-matrix approach is used for the

optical transitions (linear, nonlinear and total absorption coefficients) between two low-lying

electronic energy levels. Our results show that the electronic and optical properties of the system are

sensitive to the applied external field strengths and the magnetic field direction. Therefore, we can

conclude that the effects of the applied external fields and the tilt angle ( magnetic field direction) can

be used to adjust and control the optical properties of the system to our purpose.

Keywords: Multiple Quantum Wells, Optical Properties, Tilted Magnetic Field, Electric Field

*Cumhuriyet university (CUBAP)