Akademik Veri Yönetim Sistemi
Physica E: Low-Dimensional Systems and Nanostructures, cilt.152, 2023 (SCI-Expanded)
The optical absorption coefficients (OACs), refractive index changes (RICs), and electronic states in konwent-like quantum well under the effects of silicon impurities were studied within the framework of the effective mass approximation (EMA). Firstly, the subband energy levels and their probability densities are determined by solving Schrödinger-Poisson equations iteratively. Once these quantities are computed, we have addressed different OACs and RICs (linear and nonlinear) between the ground and the first excited levels. We have considered two positions of the silicon-doped layer. The first one is at the center of the structure and the second one is inside the left potential well. Our findings indicate that in the case of doping at the center, an increase in the concentration of the doped layer reduces the energy levels of the ground and the first excited states. However, when the doped layer is moved to the left well, its concentration increase augments the energy of the first excited state and diminishes that of the ground state. This behavior of energy levels and wavefunctions is attributed to the newly created triangular well around the doped layer. Moreover, the impact of the structural parameters and their impact on the red/blue shift of the (OACs) and (RICs) have been discussed in detail. As a consequence, the concentration and position of the doped layer as well as the structural parameters constitute an important tool to modify the shape of the confining potential which leads to additional control of the energy states and optical properties of different heterostructures based on konwent-like quantum wells.