The electric field dependence of the photoionization cross-section of shallow donor impurities in quantum dots: Infinite and finite model


Kasapoglu E. , Sari H. , Yesilgul U., Sokmen O.

SURFACE REVIEW AND LETTERS, cilt.13, ss.747-752, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 13 Konu: 6
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1142/s0218625x06008797
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Sayfa Sayıları: ss.747-752

Özet

Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photodonization cross-section on the electric field, the size of the quantum dot and the impurity position.