SUPERLATTICES AND MICROSTRUCTURES, vol.48, no.6, pp.509-516, 2010 (SCI-Expanded)
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved