The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots
SUPERLATTICES AND MICROSTRUCTURES, cilt.48, sa.6, ss.509-516, 2010 (SCI-Expanded)
- Yayın Türü: Makale / Derleme
- Cilt numarası: 48 Sayı: 6
- Basım Tarihi: 2010
- Doi Numarası: 10.1016/j.spmi.2010.09.005
- Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.509-516
- Anahtar Kelimeler: Photolonizaton, Quantum dot, Impurity, WELL WIRES, ELECTRIC-FIELD, STRESS, DEPENDENCE, GAAS-(GA
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved