The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, cilt.48, sa.6, ss.509-516, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Derleme
  • Cilt numarası: 48 Sayı: 6
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.spmi.2010.09.005
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.509-516
  • Anahtar Kelimeler: Photolonizaton, Quantum dot, Impurity, WELL WIRES, ELECTRIC-FIELD, STRESS, DEPENDENCE, GAAS-(GA
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved