The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.48, no.6, pp.509-516, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Review
  • Volume: 48 Issue: 6
  • Publication Date: 2010
  • Doi Number: 10.1016/j.spmi.2010.09.005
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.509-516
  • Keywords: Photolonizaton, Quantum dot, Impurity, WELL WIRES, ELECTRIC-FIELD, STRESS, DEPENDENCE, GAAS-(GA
  • Sivas Cumhuriyet University Affiliated: Yes

Abstract

Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved