Akademik Veri Yönetim Sistemi
Materials Science in Semiconductor Processing, cilt.197, 2025 (SCI-Expanded)
We present a Gunn light-emitting diode based on n-type In0.53Ga0.47As, operating at approximately 1620 nm with enhanced emission properties achieved by integrating an InP waveguide structure, under pulsed operation at room temperature. The device comprises of a 5000 nm thick n-type In0.53Ga0.47As epilayer grown on a semi-insulating InP substrate via Metal Organic Vapor Phase Epitaxy. Gunn oscillations, with a period of approximately 0.2 ns, are observed at an electric field of approximately 2.85 kV/cm. The onset of light emission at a wavelength of around 1620 nm coincides with the Negative Differential Resistance threshold on the current-voltage curve, and the emission intensity markedly increases as applied electric field Increases. The integration of an InP-based optical waveguide significantly improves the emission characteristics of the device. Although the threshold electric field for NDR and light emission remains constant, the emission intensity increases sixfold compared to a reference device without a waveguide, which is consistent with the simulation results. These findings reveal the potential of InP waveguide integration in improving the performance of In0.53Ga0.47As- based pulsed near-infrared light-emitting Gunn devices.