Shallow donor impurities in different shaped double quantum wells under the electric field

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Atıf İçin Kopyala

Kasapoglu E., Sokmen I.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.241, sa.5, ss.1066-1072, 2004 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 241 Sayı: 5
• Basım Tarihi: 2004
• Doi Numarası: 10.1002/pssb.200301985
• Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.1066-1072
• Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells under the electric field is calculated by using a variational approach. The results have been obtained in the presence electric field applied along the growth direction as a function of the impurity position, barrier width and the geometric shape of the double quantum wells. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.