Shallow donor impurities in different shaped double quantum wells under the electric field


Kasapoglu E. , Sokmen I.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.241, ss.1066-1072, 2004 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 241 Konu: 5
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1002/pssb.200301985
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
  • Sayfa Sayıları: ss.1066-1072

Özet

The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells under the electric field is calculated by using a variational approach. The results have been obtained in the presence electric field applied along the growth direction as a function of the impurity position, barrier width and the geometric shape of the double quantum wells. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.