The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well


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YEŞİLGÜL Ü. , UNGAN F. , ŞAKİROĞLU S., Duque C., Mora-Ramos M., KASAPOĞLU E. , ...Daha Fazla

NANOSCALE RESEARCH LETTERS, cilt.7, 2012 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 7
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1186/1556-276x-7-586
  • Dergi Adı: NANOSCALE RESEARCH LETTERS

Özet

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.