The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well

Creative Commons License

YEŞİLGÜL Ü., UNGAN F., ŞAKİROĞLU S., Duque C., Mora-Ramos M., KASAPOĞLU E., ...Daha Fazla

NANOSCALE RESEARCH LETTERS, cilt.7, 2012 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Derleme
  • Cilt numarası: 7
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1186/1556-276x-7-586
  • Dergi Adı: NANOSCALE RESEARCH LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.