InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

Sheremet V., Gheshlaghi N., Sozen M., Elci M., Sheremet N., Aydinli A., ...Daha Fazla

SUPERLATTICES AND MICROSTRUCTURES, cilt.116, ss.253-261, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 116
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.spmi.2018.02.002
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.253-261
  • Anahtar Kelimeler: Light-emitting diode, Step-graded electron injector, Stress compensation layer, InGaN/GaN, LIGHT-EMITTING-DIODES, QUANTUM-WELLS, EFFICIENCY, EMISSION, RECOMBINATION, LOCALIZATION, LUMINESCENCE, DYNAMICS, ORIGIN
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.